Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 189
... important developments in the area of sputtered metal films , which have occurred since the publication of " Thin Film Processes I , " are listed below . Sputter deposition of compound semiconductors and semiconducting oxides ( e.g. ...
... important developments in the area of sputtered metal films , which have occurred since the publication of " Thin Film Processes I , " are listed below . Sputter deposition of compound semiconductors and semiconducting oxides ( e.g. ...
Page 730
... important role in pattern transfer by plasma - assisted etching . But the fidelity of a pattern transfer process ( e.g. , how well a particular masking pattern can be transferred into a substrate surface ) is not only dependent on these ...
... important role in pattern transfer by plasma - assisted etching . But the fidelity of a pattern transfer process ( e.g. , how well a particular masking pattern can be transferred into a substrate surface ) is not only dependent on these ...
Page 799
... importance for practical applications . The maximum resolution of a pro- cess determines the ultimate feature size that can be etched . This is obviously important for microelectronic applications , which currently re- quire micrometer ...
... importance for practical applications . The maximum resolution of a pro- cess determines the ultimate feature size that can be etched . This is obviously important for microelectronic applications , which currently re- quire micrometer ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength