Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 192
... increase in reactive gas flow because the bombarding ion flux keeps the eroded portion of the target clear of dielectric deposit . The reactive gas is removed by the external pump and is getter pumped by the sputtered metal flux . The ...
... increase in reactive gas flow because the bombarding ion flux keeps the eroded portion of the target clear of dielectric deposit . The reactive gas is removed by the external pump and is getter pumped by the sputtered metal flux . The ...
Page 217
... increase in bonding energy between substrate and deposited atoms Change in the morphology Stimulation of nucleation , growth of nuclei , and coalescence Enhancement of interfacial layer formation Change in the morphology Increase in the ...
... increase in bonding energy between substrate and deposited atoms Change in the morphology Stimulation of nucleation , growth of nuclei , and coalescence Enhancement of interfacial layer formation Change in the morphology Increase in the ...
Page 788
... increase in ejecta velocity after saturation [ 25 ] or the continuing increase in the acoustic impulse signal ( Fig . 3 ) . Both indicate that the energy deposited by the laser continues to increase as flux increases . Nor can plume ...
... increase in ejecta velocity after saturation [ 25 ] or the continuing increase in the acoustic impulse signal ( Fig . 3 ) . Both indicate that the energy deposited by the laser continues to increase as flux increases . Nor can plume ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength