Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 255
... interest - deposition of nitrides and carbides of the refractory metals for wear and decorative applications . A ... interests of particular authors in often fairly narrow and specialized situations . Lucas et al . [ 129 , 130 ] studied ...
... interest - deposition of nitrides and carbides of the refractory metals for wear and decorative applications . A ... interests of particular authors in often fairly narrow and specialized situations . Lucas et al . [ 129 , 130 ] studied ...
Page 444
... Interest in photo - CVD partially stems from the ability of optical radia- tion to induce specific chemical reactions in the gas phase or at a surface . The selective , optical production of atoms , molecular radicals , or even excited ...
... Interest in photo - CVD partially stems from the ability of optical radia- tion to induce specific chemical reactions in the gas phase or at a surface . The selective , optical production of atoms , molecular radicals , or even excited ...
Page 471
... interest to photo - CVD absorb . Shorter - wavelength ( VUV ) lamps include deuterium ( D2 ) , hydrogen , and the rare gases . Deuterium lamps produce negligible radiation in the visible but generate continua that peak near λ = 180 nm ...
... interest to photo - CVD absorb . Shorter - wavelength ( VUV ) lamps include deuterium ( D2 ) , hydrogen , and the rare gases . Deuterium lamps produce negligible radiation in the visible but generate continua that peak near λ = 180 nm ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength