Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 67
John L. Vossen, Werner Kern. DISCHARGE CHAMBER ACCEL . GRID SAMPLE ION BEAM M NEUT . VB VACC SAMPLE Fig . 56. The variation in dc potential ( lower curves ) as a function of position ( upper curves ) for a Kaufman - type ion source . of ...
John L. Vossen, Werner Kern. DISCHARGE CHAMBER ACCEL . GRID SAMPLE ION BEAM M NEUT . VB VACC SAMPLE Fig . 56. The variation in dc potential ( lower curves ) as a function of position ( upper curves ) for a Kaufman - type ion source . of ...
Page 755
... beam will be deflected several degrees from its proper direction , and direct accelerator impingement will be encountered at a lower - than - normal beam current . The problem of misaligned grids is ... beam ions V - 2 . ION BEAM ETCHING 755.
... beam will be deflected several degrees from its proper direction , and direct accelerator impingement will be encountered at a lower - than - normal beam current . The problem of misaligned grids is ... beam ions V - 2 . ION BEAM ETCHING 755.
Page 771
... ion energy is needed ; one should then find out what ion current and ion current density are available at that ion energy . The steep variation of ion - beam current with voltage , together with the frequent need for a high ion - beam ...
... ion energy is needed ; one should then find out what ion current and ion current density are available at that ion energy . The steep variation of ion - beam current with voltage , together with the frequent need for a high ion - beam ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength