Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 68
Page 241
... ion energy : The high particle velocity , and hence energy , resulted from gas dynamic acceleration of the vapor . This argument was based on an esti- mated particle density in the plasma near the cathode of 1018 to 1020 cm and an ...
... ion energy : The high particle velocity , and hence energy , resulted from gas dynamic acceleration of the vapor . This argument was based on an esti- mated particle density in the plasma near the cathode of 1018 to 1020 cm and an ...
Page 755
... energy to a maximum of roughly 100 eV . Ion current densities of several milliamps per square centimeter are possible at the accelerator grid , which is very high for a gridded ion source at such a low ... ions V - 2 . ION BEAM ETCHING 755.
... energy to a maximum of roughly 100 eV . Ion current densities of several milliamps per square centimeter are possible at the accelerator grid , which is very high for a gridded ion source at such a low ... ions V - 2 . ION BEAM ETCHING 755.
Page 771
John L. Vossen, Werner Kern. energy . The effect of ion energy on etch rate and damage should be considered ( Section III ) to determine what ion energy is needed ; one should then find out what ion current and ion current density are ...
John L. Vossen, Werner Kern. energy . The effect of ion energy on etch rate and damage should be considered ( Section III ) to determine what ion energy is needed ; one should then find out what ion current and ion current density are ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength