Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 63
... ion tempera- tures are more likely . VIII . BROAD - BEAM ION SOURCES Although the topic of broad - beam ion sources will be discussed in more detail in a later chapter ( Chapter V.2 ) , it is appropriate to compare the plasma operation ...
... ion tempera- tures are more likely . VIII . BROAD - BEAM ION SOURCES Although the topic of broad - beam ion sources will be discussed in more detail in a later chapter ( Chapter V.2 ) , it is appropriate to compare the plasma operation ...
Page 67
... ion source . of the discharge chamber . When an ion moves though the first or screen grid , it is attracted by the negative potential of the accelerator grid . If the holes on the two grids are suitably aligned , the ion passes through ...
... ion source . of the discharge chamber . When an ion moves though the first or screen grid , it is attracted by the negative potential of the accelerator grid . If the holes on the two grids are suitably aligned , the ion passes through ...
Page 188
... ion source is , by far , the most popular type of source for ion beam sputtering . Detailed descriptions of the Kaufman source , together with other types of sources ( e.g. , duplasmatron ) and ion beam sputtering techniques , are found ...
... ion source is , by far , the most popular type of source for ion beam sputtering . Detailed descriptions of the Kaufman source , together with other types of sources ( e.g. , duplasmatron ) and ion beam sputtering techniques , are found ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength