Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 117
... kinetics of the compound formation by this process . The presence of a " plasma ” in the ARE process influences the reaction ... kinetic constraints must be satisfied , which also applies to the deposition of refractory compound films by ...
... kinetics of the compound formation by this process . The presence of a " plasma ” in the ARE process influences the reaction ... kinetic constraints must be satisfied , which also applies to the deposition of refractory compound films by ...
Page 290
... Kinetic rate parameters are essential in CVD modeling to predict the rate of formation of gas - phase species leading to either film growth or impurity incorporation . Since only a few kinetic parameters are known for well - studied ...
... Kinetic rate parameters are essential in CVD modeling to predict the rate of formation of gas - phase species leading to either film growth or impurity incorporation . Since only a few kinetic parameters are known for well - studied ...
Page 647
... kinetic details of reaction and transport . We will outline a number of cases of selected area deposition where different kinetic limitations apply , and we will examine the effects on throughput and efficiency of the process . Kinetic ...
... kinetic details of reaction and transport . We will outline a number of cases of selected area deposition where different kinetic limitations apply , and we will examine the effects on throughput and efficiency of the process . Kinetic ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength