Thin Film Processes, Volume 2 |
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Page 30
When the second electrode is driven , additional ion bombardment can be
induced there . This is often beneficial to the properties of the materials deposited
on samples located on this electrode . In addition , the ion bombardment may
lead to ...
When the second electrode is driven , additional ion bombardment can be
induced there . This is often beneficial to the properties of the materials deposited
on samples located on this electrode . In addition , the ion bombardment may
lead to ...
Page 688
Three mechanisms have been proposed to account for ion - induced chemical
reactions that lead to enhanced etching . In 1978 , Mauer et al . ( 27 ] proposed a
mechanism they called chemically enhanced physical etching . The enhanced ...
Three mechanisms have been proposed to account for ion - induced chemical
reactions that lead to enhanced etching . In 1978 , Mauer et al . ( 27 ] proposed a
mechanism they called chemically enhanced physical etching . The enhanced ...
Page 702
In addition to device degradation , redeposited sputtered material can also lead
to rough surfaces ( pitting ) because of micromasking . A direct comparison of
etch variables in various etching systems and their influence on damage in Si
was ...
In addition to device degradation , redeposited sputtered material can also lead
to rough surfaces ( pitting ) because of micromasking . A direct comparison of
etch variables in various etching systems and their influence on damage in Si
was ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer