Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 86
... lower part of the chamber . A separation plate between the lower and upper part of the chamber provides a pressure differential , so as to allow high - pressure operation in the upper chamber while maintaining a low enough pressure in ...
... lower part of the chamber . A separation plate between the lower and upper part of the chamber provides a pressure differential , so as to allow high - pressure operation in the upper chamber while maintaining a low enough pressure in ...
Page 157
... lower melting temperature , the entire charge is molten during evaporation . Its higher thermal conductivity results ... lower temperature exhibited an interface defect density that was lower by orders . of magnitude , indicating the ...
... lower melting temperature , the entire charge is molten during evaporation . Its higher thermal conductivity results ... lower temperature exhibited an interface defect density that was lower by orders . of magnitude , indicating the ...
Page 327
... lower temperatures than generally required for TEOS . Diacetoxyditertiarybutoxysilane , " DADBS , " when reacted with TMP - ite and O2 , yields PSG by LPCVD at 450-500 ° C and 0.6 torr system pressure [ 298 , 333 ] . Even lower ...
... lower temperatures than generally required for TEOS . Diacetoxyditertiarybutoxysilane , " DADBS , " when reacted with TMP - ite and O2 , yields PSG by LPCVD at 450-500 ° C and 0.6 torr system pressure [ 298 , 333 ] . Even lower ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength