Thin Film Processes, Volume 2 |
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Page 86
A typical system includes an electron beam gun located in the lower part of the
chamber . A separation plate between the lower and upper part of the chamber
provides a pressure differential , so as to allow high - pressure operation in the ...
A typical system includes an electron beam gun located in the lower part of the
chamber . A separation plate between the lower and upper part of the chamber
provides a pressure differential , so as to allow high - pressure operation in the ...
Page 157
... and thickness control , it is possible to grow these heterostructures up to
several micrometers in thickness ; practical devices are now possible ( 62 – 64 ) .
Evaporation of Ge from an EB source is very similar to that of Si . Because of its
lower ...
... and thickness control , it is possible to grow these heterostructures up to
several micrometers in thickness ; practical devices are now possible ( 62 – 64 ) .
Evaporation of Ge from an EB source is very similar to that of Si . Because of its
lower ...
Page 327
Other organosilicon compounds have been tested as a replacement for TEOS to
produce silicate glasses at lower temperatures than generally required for TEOS .
Diacetoxyditertiarybutoxysilane , “ DADBS , ” when reacted with TMP - ite and ...
Other organosilicon compounds have been tested as a replacement for TEOS to
produce silicate glasses at lower temperatures than generally required for TEOS .
Diacetoxyditertiarybutoxysilane , “ DADBS , ” when reacted with TMP - ite and ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer