Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 71
... mtorr for the case of the magnetrons , and about 0.5 mtorr for the case of the rf diode . These pressures are well into the long mean free path mode , and sputtered atoms or ions move in straight ( line - of- sight ) trajectories ...
... mtorr for the case of the magnetrons , and about 0.5 mtorr for the case of the rf diode . These pressures are well into the long mean free path mode , and sputtered atoms or ions move in straight ( line - of- sight ) trajectories ...
Page 345
... mTorr 250 ☐ 180 100 1.4 1.5 1.6 1.7 1.8 1000 / T ( 1 / ° K ) Fig . 8. Arrhenius plot of selective W deposition rate for Al via filling vs. reciprocal absolute temperature . Ptotal in mtorr : ( diamonds ) 250 , ( squares ) 180. ( After ...
... mTorr 250 ☐ 180 100 1.4 1.5 1.6 1.7 1.8 1000 / T ( 1 / ° K ) Fig . 8. Arrhenius plot of selective W deposition rate for Al via filling vs. reciprocal absolute temperature . Ptotal in mtorr : ( diamonds ) 250 , ( squares ) 180. ( After ...
Page 711
... mtorr or the pumping speed is less than 200 m3 / h [ 100 ] , rotary pumps can be used alone . Roots blowers are added when higher speed or lower pressure ( < = 15 mtorr ) is required . These pumps are well proven , sturdy , and reliable ...
... mtorr or the pumping speed is less than 200 m3 / h [ 100 ] , rotary pumps can be used alone . Roots blowers are added when higher speed or lower pressure ( < = 15 mtorr ) is required . These pumps are well proven , sturdy , and reliable ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength