Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 71
... mtorr for the case of the magnetrons , and about 0.5 mtorr for the case of the rf diode . These pressures are well into the long mean free path mode , and sputtered atoms or ions move in straight ( line - of- sight ) trajectories ...
... mtorr for the case of the magnetrons , and about 0.5 mtorr for the case of the rf diode . These pressures are well into the long mean free path mode , and sputtered atoms or ions move in straight ( line - of- sight ) trajectories ...
Page 345
... mTorr ◊ 250 ☐ 180 100 1.4 1.5 1.6 1.7 1.8 1000 / T ( 1 / ° K ) Fig . 8. Arrhenius plot of selective W deposition rate for Al via filling vs. reciprocal absolute temperature . Ptotal in mtorr : ( diamonds ) 250 , ( squares ) 180 ...
... mTorr ◊ 250 ☐ 180 100 1.4 1.5 1.6 1.7 1.8 1000 / T ( 1 / ° K ) Fig . 8. Arrhenius plot of selective W deposition rate for Al via filling vs. reciprocal absolute temperature . Ptotal in mtorr : ( diamonds ) 250 , ( squares ) 180 ...
Page 711
... mtorr or the pumping speed is less than 200 m3 / h [ 100 ] , rotary pumps can be used alone . Roots blowers are added when higher speed or lower pressure ( < = 15 mtorr ) is required . These pumps are well proven , sturdy , and reliable ...
... mtorr or the pumping speed is less than 200 m3 / h [ 100 ] , rotary pumps can be used alone . Roots blowers are added when higher speed or lower pressure ( < = 15 mtorr ) is required . These pumps are well proven , sturdy , and reliable ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength