Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 40
... magnetic field , the radius will increase while the rotational frequency remains constant , and the particle will undergo a spiral motion . The ability to couple energy into charged particles , and in particular electrons , in a magnetic ...
... magnetic field , the radius will increase while the rotational frequency remains constant , and the particle will undergo a spiral motion . The ability to couple energy into charged particles , and in particular electrons , in a magnetic ...
Page 43
... magnetic field line to another , and thus move from one field line to the next . In this way , the electron slowly moves across the transverse magnetic field towards the anode . From Eq . ( 6.3 ) , the cyclotron frequency is directly ...
... magnetic field line to another , and thus move from one field line to the next . In this way , the electron slowly moves across the transverse magnetic field towards the anode . From Eq . ( 6.3 ) , the cyclotron frequency is directly ...
Page 726
... field close to the perim- eter of the magnetic disk . The relationship of applied magnetic field , rf - induced dc bias , and etch rate of Si was studied by Yeom and Kushner . [ 131 ] in a cylindrical magnetron discharge in which the ...
... field close to the perim- eter of the magnetic disk . The relationship of applied magnetic field , rf - induced dc bias , and etch rate of Si was studied by Yeom and Kushner . [ 131 ] in a cylindrical magnetron discharge in which the ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength