Thin Film Processes, Volume 2 |
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Page 39
PLASMAS IN THE PRESENCE OF MAGNETIC FIELDS Plasmas are moderately
conductive and therefore are only weakly perturbed by the application of electric
fields . However , the application of a magnetic field can have very significant ...
PLASMAS IN THE PRESENCE OF MAGNETIC FIELDS Plasmas are moderately
conductive and therefore are only weakly perturbed by the application of electric
fields . However , the application of a magnetic field can have very significant ...
Page 43
electric field , is due , in this case , to collisions the electron suffers with ions and
neutrals within the bulk of the plasma . During a collision , the electron is able to
jump from one magnetic field line to another , and thus move from one field line to
...
electric field , is due , in this case , to collisions the electron suffers with ions and
neutrals within the bulk of the plasma . During a collision , the electron is able to
jump from one magnetic field line to another , and thus move from one field line to
...
Page 726
Its main drawback is the large fringing field close to the perimeter of the magnetic
disk . The relationship of applied magnetic field , rf - induced dc bias , and etch
rate of Si was studied by Yeom and Kushner . ( 131 ) in a cylindrical magnetron ...
Its main drawback is the large fringing field close to the perimeter of the magnetic
disk . The relationship of applied magnetic field , rf - induced dc bias , and etch
rate of Si was studied by Yeom and Kushner . ( 131 ) in a cylindrical magnetron ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer