Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 764
... masks are generated to much poorer tolerances , so that the mask usually limits the etch quality . A mask usually incorporates some defects , and , with the high resolution of IBE , these defects will be reproduced in the etching ...
... masks are generated to much poorer tolerances , so that the mask usually limits the etch quality . A mask usually incorporates some defects , and , with the high resolution of IBE , these defects will be reproduced in the etching ...
Page 765
... mask pattern in IBE , it is important for the mask to remain intact throughout the etching . A common mistake in photoresist masks is to have walls with a positive slope ( Fig . 4a ) , rather than vertical or undercut walls . A positive ...
... mask pattern in IBE , it is important for the mask to remain intact throughout the etching . A common mistake in photoresist masks is to have walls with a positive slope ( Fig . 4a ) , rather than vertical or undercut walls . A positive ...
Page 793
... Mask - to - feature size ratio is approximately 1 : 1 . The pattern may be formed by exposing a photoresist and subsequently developing the image , typically with a wet etching solution , or by direct , i.e. , one - step , photochemical ...
... Mask - to - feature size ratio is approximately 1 : 1 . The pattern may be formed by exposing a photoresist and subsequently developing the image , typically with a wet etching solution , or by direct , i.e. , one - step , photochemical ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength