Thin Film Processes, Volume 2 |
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Page 145
Dissociation ( Cracker ) Sources Dissociation sources are used where it
becomes desirable to break down large molecules to improve material quality .
Solid materials such as arsenic and phosphorus evaporate in tetramer forms , but
it was ...
Dissociation ( Cracker ) Sources Dissociation sources are used where it
becomes desirable to break down large molecules to improve material quality .
Solid materials such as arsenic and phosphorus evaporate in tetramer forms , but
it was ...
Page 234
Davis and Miller ( 62 ) , in somewhat similar studies , observed ion emissions
from a range of cathode materials for arc ... B . Cathode Erosion and Erosion
Rates The mechanism of material erosion from the cathode has been the subject
of ...
Davis and Miller ( 62 ) , in somewhat similar studies , observed ion emissions
from a range of cathode materials for arc ... B . Cathode Erosion and Erosion
Rates The mechanism of material erosion from the cathode has been the subject
of ...
Page 415
The presence of ordering in these material is of both fundamental and practical
interest . The formation of a long - range order can influence the optical and
electrical properties of the material . The In , Ga1 - 4P system is used as a short ...
The presence of ordering in these material is of both fundamental and practical
interest . The formation of a long - range order can influence the optical and
electrical properties of the material . The In , Ga1 - 4P system is used as a short ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer