Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 162
... Metals . A major interest in metal epitaxy is related to the magnetic studies . Iron , for instance , has been investigated extensively . It can be evaporated from an effusion cell and grown epitaxially on GaAs [ 110 , 111 ] . This ...
... Metals . A major interest in metal epitaxy is related to the magnetic studies . Iron , for instance , has been investigated extensively . It can be evaporated from an effusion cell and grown epitaxially on GaAs [ 110 , 111 ] . This ...
Page 255
... metal deposition . In the case of reacted coatings , some reaction may occur at the target surface , thus producing a thin surface layer of high- melting - point nitride or oxide . The presence of such a layer reduces the emission of ...
... metal deposition . In the case of reacted coatings , some reaction may occur at the target surface , thus producing a thin surface layer of high- melting - point nitride or oxide . The presence of such a layer reduces the emission of ...
Page 517
... metal alkoxides , alcohol , and water and applied to the metal surface . The mechanism that permits the solution to adhere is the hydrolyzation of the metal alkoxides , which makes the solution actively seek to form chemical bonds ...
... metal alkoxides , alcohol , and water and applied to the metal surface . The mechanism that permits the solution to adhere is the hydrolyzation of the metal alkoxides , which makes the solution actively seek to form chemical bonds ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength