Thin Film Processes, Volume 2 |
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Page 255
In general , the problem of macroparticles is more severe in the case of pure
metal deposition . In the case of reacted coatings , some reaction may occur at
the target surface , thus producing a thin surface layer of highmelting - point
nitride or ...
In general , the problem of macroparticles is more severe in the case of pure
metal deposition . In the case of reacted coatings , some reaction may occur at
the target surface , thus producing a thin surface layer of highmelting - point
nitride or ...
Page 463
Zhang and Stuke [ 30 ] investigated the photochemistry of metal alkyl adlayers by
laser time - of - flight mass spectroscopy and showed that photodissociation of
chemisorbed adlayers of TMA ( on Si or quartz ) at 248 nm yields much higher ...
Zhang and Stuke [ 30 ] investigated the photochemistry of metal alkyl adlayers by
laser time - of - flight mass spectroscopy and showed that photodissociation of
chemisorbed adlayers of TMA ( on Si or quartz ) at 248 nm yields much higher ...
Page 517
chrome oxides can be mixed into a borosilicate solution of metal alkoxides ,
alcohol , and water and applied to the metal surface . The mechanism that
permits the solution to adhere is the hydrolyzation of the metal alkoxides , which
makes the ...
chrome oxides can be mixed into a borosilicate solution of metal alkoxides ,
alcohol , and water and applied to the metal surface . The mechanism that
permits the solution to adhere is the hydrolyzation of the metal alkoxides , which
makes the ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer