Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 86
Page 220
... method , and 8 × 10-4 cm2 for the autograph method . Single cell spots are reported to have an area of 5 × 10-5 cm2 . Daalder [ 29 ] used the autograph method to determine both spot size and current density on copper cathodes . The ...
... method , and 8 × 10-4 cm2 for the autograph method . Single cell spots are reported to have an area of 5 × 10-5 cm2 . Daalder [ 29 ] used the autograph method to determine both spot size and current density on copper cathodes . The ...
Page 224
... method ) and observation of the arc plasma ( high - speed photography method ) to obtain the magnitude of the current density . The autograph method yielded current densities in the range of 107 to 108 A / cm2 . The high - speed ...
... method ) and observation of the arc plasma ( high - speed photography method ) to obtain the magnitude of the current density . The autograph method yielded current densities in the range of 107 to 108 A / cm2 . The high - speed ...
Page 266
... method relates to the deposi- tion of macroparticles , as previously discussed . In the case of cutting and forming tools , these macroparticles have not proved to be of great sig- nificance , provided that the concentration and size of ...
... method relates to the deposi- tion of macroparticles , as previously discussed . In the case of cutting and forming tools , these macroparticles have not proved to be of great sig- nificance , provided that the concentration and size of ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength