Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 220
... observed were found to be hemispherical in shape . Measurements of a single spot arc , taken for 11 different arc currents in the range of 4.7 A to 105 A , indicated that for any single arc current , crater diameters have a range of ...
... observed were found to be hemispherical in shape . Measurements of a single spot arc , taken for 11 different arc currents in the range of 4.7 A to 105 A , indicated that for any single arc current , crater diameters have a range of ...
Page 227
... observed the expansion of a ring of spots on a circular cathode with the arc struck initially at the center . It was ... observed . The relationship between arc velocity and self - generated magnetic fields observed by Sher- man et al ...
... observed the expansion of a ring of spots on a circular cathode with the arc struck initially at the center . It was ... observed . The relationship between arc velocity and self - generated magnetic fields observed by Sher- man et al ...
Page 241
... observed in the cathode jet , and they presented further analysis of the problem . Miller [ 108 ] investigated ion energies and compared his observations with the predictions of the potential hump and gas dynamic theories . The arc ...
... observed in the cathode jet , and they presented further analysis of the problem . Miller [ 108 ] investigated ion energies and compared his observations with the predictions of the potential hump and gas dynamic theories . The arc ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength