Thin Film Processes, Volume 2 |
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Page 220
The majority of the craters observed were found to be hemispherical ... the
measured , most probable crater diameters ; a maximum current density was
observed that corresponded to an arc current of 50 A . The increasing crater size
at higher ...
The majority of the craters observed were found to be hemispherical ... the
measured , most probable crater diameters ; a maximum current density was
observed that corresponded to an arc current of 50 A . The increasing crater size
at higher ...
Page 227
Observation of crater size distribution led Daalder [ 68 ] to conclude that the total
current is equally distributed between the multiple ... [ 71 ] observed the
expansion of a ring of spots on a circular cathode with the arc struck initially at the
center .
Observation of crater size distribution led Daalder [ 68 ] to conclude that the total
current is equally distributed between the multiple ... [ 71 ] observed the
expansion of a ring of spots on a circular cathode with the arc struck initially at the
center .
Page 241
Miller ( 108 ] investigated ion energies and compared his observations with the
predictions of the potential hump and gas ... Miller found that neither theory
adequately predicted the experimentally observed ion energies or the variation of
ion ...
Miller ( 108 ] investigated ion energies and compared his observations with the
predictions of the potential hump and gas ... Miller found that neither theory
adequately predicted the experimentally observed ion energies or the variation of
ion ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer