Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 71
Page 686
... occurs : → O2 + 2e ̄ . Often dissociation and ionization occur in one step : e + CF4 ← CF + F + 2e ̄ . Because of the strong electronegative character of many of the etch gases currently used ( e.g. , O2 , CF4 , CHF3 , BCl3 , SF6 ...
... occurs : → O2 + 2e ̄ . Often dissociation and ionization occur in one step : e + CF4 ← CF + F + 2e ̄ . Because of the strong electronegative character of many of the etch gases currently used ( e.g. , O2 , CF4 , CHF3 , BCl3 , SF6 ...
Page 726
... occurs at intermedi- ate magnetic field strength at a bias voltage between 25 and 50 V. This corresponds to conditions that maximize the effectiveness of both ion bombardment and ion density , and furthermore results in highly aniso ...
... occurs at intermedi- ate magnetic field strength at a bias voltage between 25 and 50 V. This corresponds to conditions that maximize the effectiveness of both ion bombardment and ion density , and furthermore results in highly aniso ...
Page 826
... occurs at slightly higher fluences where uniform surface melting occurs . During the laser pulse , acoustic [ 161 , 163 , 164 ] and / or capillary ( surface tension ) [ 161 , 164 ] waves are established in the molten region . If the ...
... occurs at slightly higher fluences where uniform surface melting occurs . During the laser pulse , acoustic [ 161 , 163 , 164 ] and / or capillary ( surface tension ) [ 161 , 164 ] waves are established in the molten region . If the ...
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength