Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 151
... Optical Pyrometer . A new in - situ growth rate monitoring technique has been developed [ 38 ] . Using an optical pyrometer with a narrow - band ( 0.94 ± 0.03 μm ) response , apparent temperature oscillations during the growth of GaAs ...
... Optical Pyrometer . A new in - situ growth rate monitoring technique has been developed [ 38 ] . Using an optical pyrometer with a narrow - band ( 0.94 ± 0.03 μm ) response , apparent temperature oscillations during the growth of GaAs ...
Page 446
... optical beam directed parallel to the surface ( adapted from Ref . 14 ) . energy disposed of ? If the optical source energy is immediately converted primarily into heat , then the film growth process is said to be photother- mal . Often ...
... optical beam directed parallel to the surface ( adapted from Ref . 14 ) . energy disposed of ? If the optical source energy is immediately converted primarily into heat , then the film growth process is said to be photother- mal . Often ...
Page 470
... optical beam ( or substrate ) is scanned , but for the parallel configuration , the optical beam does not irradiate the surface . The primary advantage of the latter is that the laser intensity can be increased at will without the ...
... optical beam ( or substrate ) is scanned , but for the parallel configuration , the optical beam does not irradiate the surface . The primary advantage of the latter is that the laser intensity can be increased at will without the ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength