Thin Film Processes, Volume 2 |
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Page 39
1 ) where q is the charge on the particle , v is the velocity , and B is the magnetic
field . For a charged particle moving at right angles to a magnetic field , this force
will cause the particle to move in an orbital path . The orbit can be found by ...
1 ) where q is the charge on the particle , v is the velocity , and B is the magnetic
field . For a charged particle moving at right angles to a magnetic field , this force
will cause the particle to move in an orbital path . The orbit can be found by ...
Page 40
The frequency of rotation of a given particle in a magnetic field can also be easily
found as w = qB / m , ( 6 . 4 ) where w is the rotational speed in radians / s . This
frequency is known as the cyclotron frequency . It is interesting to note that this ...
The frequency of rotation of a given particle in a magnetic field can also be easily
found as w = qB / m , ( 6 . 4 ) where w is the rotational speed in radians / s . This
frequency is known as the cyclotron frequency . It is interesting to note that this ...
Page 303
Direct observations of flow phenomena are typically made by smoke trade
studies using light scattering by TiO2 particles generated by reacting TiCl4 with
water vapor . This technique has been used to visualize axisymmetric ( 192 , 201
) and ...
Direct observations of flow phenomena are typically made by smoke trade
studies using light scattering by TiO2 particles generated by reacting TiCl4 with
water vapor . This technique has been used to visualize axisymmetric ( 192 , 201
) and ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer