Thin Film Processes, Volume 2 |
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Page 288
Gas - phase reactions become progressively important with increasing
temperature and partial pressure of the reactants . At large reactant
concentrations , gas - phase reactions may eventually lead to detrimental gas -
phase nucleation ( 82 ...
Gas - phase reactions become progressively important with increasing
temperature and partial pressure of the reactants . At large reactant
concentrations , gas - phase reactions may eventually lead to detrimental gas -
phase nucleation ( 82 ...
Page 384
Furthermore , the toxic H2Se can be produced by reacting solid Se with H2 on a
demand basis ( 109 ) . IV . GAS - PHASE AND SURFACE REACTION
MECHANISMS The chemical mechanisms underlying OMVPE are complex ,
involving both ...
Furthermore , the toxic H2Se can be produced by reacting solid Se with H2 on a
demand basis ( 109 ) . IV . GAS - PHASE AND SURFACE REACTION
MECHANISMS The chemical mechanisms underlying OMVPE are complex ,
involving both ...
Page 462
In the gas phase , the lateral diffusion of photoproducts imposes a limit on the
smallest features sizes obtainable by photo - assisted film deposition , and while
this can be suppressed to some extent by controlling the identity and pressure of
...
In the gas phase , the lateral diffusion of photoproducts imposes a limit on the
smallest features sizes obtainable by photo - assisted film deposition , and while
this can be suppressed to some extent by controlling the identity and pressure of
...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer