Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 764
... photoresist pattern . The portion of the photoresist that is at the optimum angle for etching will grow at the expense of other portions resulting in the formation of a facet ( Fig . 3 ) . If this facet is permitted to grow to a large ...
... photoresist pattern . The portion of the photoresist that is at the optimum angle for etching will grow at the expense of other portions resulting in the formation of a facet ( Fig . 3 ) . If this facet is permitted to grow to a large ...
Page 765
... photoresist masks is to have walls with a positive slope ( Fig . 4a ) , rather than vertical or undercut walls . A ... photoresist is common for IBE masks . There are many types of photoresist , with AZ 1350H and Kodak 5214 among the ...
... photoresist masks is to have walls with a positive slope ( Fig . 4a ) , rather than vertical or undercut walls . A ... photoresist is common for IBE masks . There are many types of photoresist , with AZ 1350H and Kodak 5214 among the ...
Page 793
... photoresists in conventional , i.e. , nonlaser , photolithographic processes . Patterned photoresist films on a substrate surface are an example of con- tact masking for subsequent processing steps . Virtually all indirect , i.e. , two ...
... photoresists in conventional , i.e. , nonlaser , photolithographic processes . Patterned photoresist films on a substrate surface are an example of con- tact masking for subsequent processing steps . Virtually all indirect , i.e. , two ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength