Thin Film Processes, Volume 2 |
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Page 12
Such techniques as physical sputtering , plasma etching , reactive ion etching (
RIE ) , sputter deposition , plasma ... reactive sputter deposition , and a range of
ion beam - based techniques all rely on the formation and properties of plasmas .
Such techniques as physical sputtering , plasma etching , reactive ion etching (
RIE ) , sputter deposition , plasma ... reactive sputter deposition , and a range of
ion beam - based techniques all rely on the formation and properties of plasmas .
Page 15
plasma . Eventually , a steady state condition would be reached in which the
plasma potential is high enough that the loss rate of electrons is reduced to the
same level as the loss rate of ions . In this way , the plasma will retain its overall ...
plasma . Eventually , a steady state condition would be reached in which the
plasma potential is high enough that the loss rate of electrons is reduced to the
same level as the loss rate of ions . In this way , the plasma will retain its overall ...
Page 37
V . AFTERGLOW PLASMAS Upon to this point , we have only considered plasma
processes in which a sample would be placed directly in the plasma , perhaps
even on one of the electrodes . As an alternative , it is possible to position ...
V . AFTERGLOW PLASMAS Upon to this point , we have only considered plasma
processes in which a sample would be placed directly in the plasma , perhaps
even on one of the electrodes . As an alternative , it is possible to position ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |