Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 295
... possible to grow Si on exposed Si surfaces while preventing deposition on SiO2 surfaces [ 53 , 158a - c ] . A similar selective growth pro- cess is observed for CVD of W on Si / SiO2 substrates [ 146 , 161 , 162 ] and for MOCVD of GaAs ...
... possible to grow Si on exposed Si surfaces while preventing deposition on SiO2 surfaces [ 53 , 158a - c ] . A similar selective growth pro- cess is observed for CVD of W on Si / SiO2 substrates [ 146 , 161 , 162 ] and for MOCVD of GaAs ...
Page 301
... possible . Axisymmetric models have demonstrated that over a certain range of reactor parameters and operating conditions , it is possible to obtain two stable flow fields , a forced convection dominated flow and a flow characterized by ...
... possible . Axisymmetric models have demonstrated that over a certain range of reactor parameters and operating conditions , it is possible to obtain two stable flow fields , a forced convection dominated flow and a flow characterized by ...
Page 392
... possible , and to identify operating conditions leading to uniform growth and sharp transitions in composition between adjacent layers [ 148–153 ] . The reactor geometry has considerable impact on the fluid flow struc- ture . It is possible ...
... possible , and to identify operating conditions leading to uniform growth and sharp transitions in composition between adjacent layers [ 148–153 ] . The reactor geometry has considerable impact on the fluid flow struc- ture . It is possible ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength