Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 15
... potential , which is now the average potential of the bulk plasma with respect to the chamber , will be on the order of several volts more positive than the chamber potential . This result is found in all processing plasmas : The plasma ...
... potential , which is now the average potential of the bulk plasma with respect to the chamber , will be on the order of several volts more positive than the chamber potential . This result is found in all processing plasmas : The plasma ...
Page 27
... Potential The plasma potential must be slightly more positive than the most positive surface exposed to the plasma . This was , as we found earlier , a result of the higher mobility of the electrons compared to the ions . In the rf ...
... Potential The plasma potential must be slightly more positive than the most positive surface exposed to the plasma . This was , as we found earlier , a result of the higher mobility of the electrons compared to the ions . In the rf ...
Page 121
... potential barrier so that the more mobile species , i.e. , electrons , are electrostatically deflected away from the substrate . The height of the potential barrier thus adjusts itself so as to balance the electron flow to the surface ...
... potential barrier so that the more mobile species , i.e. , electrons , are electrostatically deflected away from the substrate . The height of the potential barrier thus adjusts itself so as to balance the electron flow to the surface ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength