Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 106
... power - density beam " flowing " from the cathode aperture and fanning out in a conical shape into the chamber . However , a parallel axial magnetic field is imposed on the beam , which then forms a high - power - density , well ...
... power - density beam " flowing " from the cathode aperture and fanning out in a conical shape into the chamber . However , a parallel axial magnetic field is imposed on the beam , which then forms a high - power - density , well ...
Page 786
... power density is sufficiently high , a plasma is formed at the surface [ 8 , 9 ] . The critical factor for producng ablation is the laser power density , i.e. , the rate of deposition of energy , not just the total energy deposited . A ...
... power density is sufficiently high , a plasma is formed at the surface [ 8 , 9 ] . The critical factor for producng ablation is the laser power density , i.e. , the rate of deposition of energy , not just the total energy deposited . A ...
Page 818
... POWER DENSITY ( kW / cm2 ) Fig . 20. Normalized photoinduced etch rate enhancement vs. laser power density for 1020 / cm3 Si , etched in 120 mtorr CF / O2 . Laser wavelengths are indicated in the figure . Reprinted with permission from ...
... POWER DENSITY ( kW / cm2 ) Fig . 20. Normalized photoinduced etch rate enhancement vs. laser power density for 1020 / cm3 Si , etched in 120 mtorr CF / O2 . Laser wavelengths are indicated in the figure . Reprinted with permission from ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength