Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 350
... precursor ( Me3N ) 2AlH3 for hot - wall LPCVD at 180 ° C substrate temperature and 25 ° C precursor temperature without carrier gas , the deposition rate was 0.9 μm / min ; at 280 ° C , it was 3 μm / min . The Al films had a rough ...
... precursor ( Me3N ) 2AlH3 for hot - wall LPCVD at 180 ° C substrate temperature and 25 ° C precursor temperature without carrier gas , the deposition rate was 0.9 μm / min ; at 280 ° C , it was 3 μm / min . The Al films had a rough ...
Page 377
... precursor development , in particular in the development of alternative precursors to the highly toxic group V and VI hydrides - e.g . , AsH3 , PH3 , and H2Se . A number of reviews of precursor selection and reactions have appeared ...
... precursor development , in particular in the development of alternative precursors to the highly toxic group V and VI hydrides - e.g . , AsH3 , PH3 , and H2Se . A number of reviews of precursor selection and reactions have appeared ...
Page 475
... precursor for optical source wavelengths below 200 nm . Considerably less is known of the photodeposition of Ga and ... precursor , and broad - area deposition rates up to 1,700 Å - min1 obtained at 248 nm [ 49 ] . If one resorts to WF6 ...
... precursor for optical source wavelengths below 200 nm . Considerably less is known of the photodeposition of Ga and ... precursor , and broad - area deposition rates up to 1,700 Å - min1 obtained at 248 nm [ 49 ] . If one resorts to WF6 ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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Common terms and phrases
alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength