Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 326
... present primarily in the desirable pentavalent form [ 327 , 328 ] , but there is normally a small fraction of P2O3 present as well that can be minimized by proper choice of deposition conditions . The oxide growth rate is in- creased by ...
... present primarily in the desirable pentavalent form [ 327 , 328 ] , but there is normally a small fraction of P2O3 present as well that can be minimized by proper choice of deposition conditions . The oxide growth rate is in- creased by ...
Page 755
... present , a broad ion beam usually has enough ions present that the mutual respulsion of positive ions would result in the ion beam spreading out in all directions . Assuming that the necessary electrons are initially present , they ...
... present , a broad ion beam usually has enough ions present that the mutual respulsion of positive ions would result in the ion beam spreading out in all directions . Assuming that the necessary electrons are initially present , they ...
Page 768
... present in the SiO2 will remove it . When the silicon is reached , there is no longer any oxygen present , and the deposition of a thin layer of carbon at the etch surface will greatly reduce the etch rate . If the etch rate is to be ...
... present in the SiO2 will remove it . When the silicon is reached , there is no longer any oxygen present , and the deposition of a thin layer of carbon at the etch surface will greatly reduce the etch rate . If the etch rate is to be ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength