Thin Film Processes, Volume 2 |
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Page 326
The phosphorus is present primarily in the desirable pentavalent form ( 327 , 328
) , but there is normally a small fraction of P2O3 present as well that can be
minimized by proper choice of deposition conditions . The oxide growth rate is ...
The phosphorus is present primarily in the desirable pentavalent form ( 327 , 328
) , but there is normally a small fraction of P2O3 present as well that can be
minimized by proper choice of deposition conditions . The oxide growth rate is ...
Page 755
That is , if there were no electrons present , a broad ion beam usually has
enough ions present that the mutual respulsion of positive ions would result in
the ion beam spreading out in all directions . Assuming that the necessary
electrons are ...
That is , if there were no electrons present , a broad ion beam usually has
enough ions present that the mutual respulsion of positive ions would result in
the ion beam spreading out in all directions . Assuming that the necessary
electrons are ...
Page 768
There will be some carbon left at the etch surface , but the oxygen that is present
in the SiO2 will remove it . When the silicon is reached , there is no longer any
oxygen present , and the deposition of a thin layer of carbon at the etch surface
will ...
There will be some carbon left at the etch surface , but the oxygen that is present
in the SiO2 will remove it . When the silicon is reached , there is no longer any
oxygen present , and the deposition of a thin layer of carbon at the etch surface
will ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer