Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 78
Page 306
... pressure Boundary layer treatment of flow , mass and heat transfer , detailed horizontal reactor Atmospheric and generic [ 186,209 ] reduced pressure horizontal reactor Atmospheric and Ga ( CH3 ) 3 + AsH3 → GaAs [ 103 , 199 ] reduced ...
... pressure Boundary layer treatment of flow , mass and heat transfer , detailed horizontal reactor Atmospheric and generic [ 186,209 ] reduced pressure horizontal reactor Atmospheric and Ga ( CH3 ) 3 + AsH3 → GaAs [ 103 , 199 ] reduced ...
Page 374
... pressure and the total pressure over the source , respectively . The bubbler must be kept in a temperature - controlled bath , since the source partial pressure is determined by the source temperature alone . Several commercial constant ...
... pressure and the total pressure over the source , respectively . The bubbler must be kept in a temperature - controlled bath , since the source partial pressure is determined by the source temperature alone . Several commercial constant ...
Page 711
... pressure ( < = 15 mtorr ) is required . These pumps are well proven , sturdy , and reliable . They are used today on most so - called high - pressure etching systems ( 0.2-10 torr ) . Corrosion is not an important problem in these pumps ...
... pressure ( < = 15 mtorr ) is required . These pumps are well proven , sturdy , and reliable . They are used today on most so - called high - pressure etching systems ( 0.2-10 torr ) . Corrosion is not an important problem in these pumps ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength