Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 170
... production require- ments of reproducibility , reliability , better uniformity , low defect density , and automation . There are small scale production facilities already established through- out the world , and MBE - produced products ...
... production require- ments of reproducibility , reliability , better uniformity , low defect density , and automation . There are small scale production facilities already established through- out the world , and MBE - produced products ...
Page 309
... PRODUCTION REACTOR SYSTEMS A. General Considerations We previously discussed thermal CVD production reactors in Section III of Ref . 1 ( pp . 278-289 ) , classifying them into low - temperature atmo- spheric - pressure reactors , high ...
... PRODUCTION REACTOR SYSTEMS A. General Considerations We previously discussed thermal CVD production reactors in Section III of Ref . 1 ( pp . 278-289 ) , classifying them into low - temperature atmo- spheric - pressure reactors , high ...
Page 823
... produce reactants by photolysis and substrate heating is minimal , no etching - induced damage is observed [ 140 ] . Melt - based processes produce fewer defects if lower ther- mal gradients and , therefore , lower recrystallization ...
... produce reactants by photolysis and substrate heating is minimal , no etching - induced damage is observed [ 140 ] . Melt - based processes produce fewer defects if lower ther- mal gradients and , therefore , lower recrystallization ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength