Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 129
... PROPERTIES OF EVAPORATED FILMS Physical and chemical properties of films critically depend on structure / morphology , defects , impurity content in the film , etc. These are in turn governed by deposition variables in given process ...
... PROPERTIES OF EVAPORATED FILMS Physical and chemical properties of films critically depend on structure / morphology , defects , impurity content in the film , etc. These are in turn governed by deposition variables in given process ...
Page 611
... Properties There have been extensive studies of the properties of the thin film dielectrics and semiconductors deposited by remote PECVD . The studies of the dielectric materials have emphasized the chemical composition , including the ...
... Properties There have been extensive studies of the properties of the thin film dielectrics and semiconductors deposited by remote PECVD . The studies of the dielectric materials have emphasized the chemical composition , including the ...
Page 612
... properties that are intimately related to the amount of bonded hydrogen , and in particular the way it is distributed between monohy- dride and polyhydride bonding arrangements [ 15 , 61 ] . Properties studied include ( 1 ) the ...
... properties that are intimately related to the amount of bonded hydrogen , and in particular the way it is distributed between monohy- dride and polyhydride bonding arrangements [ 15 , 61 ] . Properties studied include ( 1 ) the ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength