Thin Film Processes, Volume 2 |
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Page 129
STRUCTURE AND PROPERTIES OF EVAPORATED FILMS Physical and
chemical properties of films critically depend on structure / morphology , defects ,
impurity content in the film , etc . These are in turn governed by deposition
variables in ...
STRUCTURE AND PROPERTIES OF EVAPORATED FILMS Physical and
chemical properties of films critically depend on structure / morphology , defects ,
impurity content in the film , etc . These are in turn governed by deposition
variables in ...
Page 611
V . PROPERTIES AND DEVICE APPLICATIONS OF REMOTE PECVD THIN
FILMS A . Properties There have been extensive studies of the properties of the
thin film dielectrics and semiconductors deposited by remote PECVD . The
studies of ...
V . PROPERTIES AND DEVICE APPLICATIONS OF REMOTE PECVD THIN
FILMS A . Properties There have been extensive studies of the properties of the
thin film dielectrics and semiconductors deposited by remote PECVD . The
studies of ...
Page 612
These studies have also tracked changes that occur with rapid thermal and
furnace annealing , and have shown that only for annealing temperatures in
excess of about 900 – 1 , 000°C do the physical properties of the remote PECVD
films ...
These studies have also tracked changes that occur with rapid thermal and
furnace annealing , and have shown that only for annealing temperatures in
excess of about 900 – 1 , 000°C do the physical properties of the remote PECVD
films ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer