Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 202
... Pumps High - vacuum pumping [ 177 ] of sputter coaters has traditionally been accomplished by diffusion pumps , oil - sealed mechanical pumps , and a liquid nitrogen cryotrap . Now there are two alternative methods of pump- ing ...
... Pumps High - vacuum pumping [ 177 ] of sputter coaters has traditionally been accomplished by diffusion pumps , oil - sealed mechanical pumps , and a liquid nitrogen cryotrap . Now there are two alternative methods of pump- ing ...
Page 585
... pump for achieving the UHV base pressure , and for pro- cessing as well [ 63 ] . In this mode of operation , the turbomolecular pump is configured for processing corrosive materials . Although cryopumps have higher pumping speeds per ...
... pump for achieving the UHV base pressure , and for pro- cessing as well [ 63 ] . In this mode of operation , the turbomolecular pump is configured for processing corrosive materials . Although cryopumps have higher pumping speeds per ...
Page 711
... pump if the gas ballast is not used . Relatively large volumes of gas can be admitted to the pump . As a rule of thumb , a two - stage pump can handle up to 600 scem of ballast gas for each m3 / h of its rated pumping speed . However ...
... pump if the gas ballast is not used . Relatively large volumes of gas can be admitted to the pump . As a rule of thumb , a two - stage pump can handle up to 600 scem of ballast gas for each m3 / h of its rated pumping speed . However ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength