Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 319
... ratio of 1 : 1 [ 270 ] , and at 450 ° C at 1.45 : 1 ( p . 102 in Ref . 14 ) . Similar ratios have been reported for other types of LPCVD reactors [ 271 , 272 ] . The reactor design rather than differences in the pro- cess mechanism may ...
... ratio of 1 : 1 [ 270 ] , and at 450 ° C at 1.45 : 1 ( p . 102 in Ref . 14 ) . Similar ratios have been reported for other types of LPCVD reactors [ 271 , 272 ] . The reactor design rather than differences in the pro- cess mechanism may ...
Page 326
... ratio indicates that at 360 ° C a PSG deposition rate maximum occurs at a ratio of 1 : 1.5 . The films have a higher P content than would be expected from stoichiometry due to inhibition of SiH4 oxidation relative to the PH3 oxidation ...
... ratio indicates that at 360 ° C a PSG deposition rate maximum occurs at a ratio of 1 : 1.5 . The films have a higher P content than would be expected from stoichiometry due to inhibition of SiH4 oxidation relative to the PH3 oxidation ...
Page 602
... ratio , but the deposition rate is a function of this ratio . Specifically , for a fixed flow of SiH4 , it is proportional to the O2 flow rate . However , if charged particle injection was allowed , thereby activating the SiH4 , the ...
... ratio , but the deposition rate is a function of this ratio . Specifically , for a fixed flow of SiH4 , it is proportional to the O2 flow rate . However , if charged particle injection was allowed , thereby activating the SiH4 , the ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength