Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 118
... reactant to the reaction interface ; ( 2 ) transport of reaction products away from the reaction interface ; ( 3 ) the ... reactants ; ( 2 ) adequate collision frequency ; ( 3 ) the rate of chemical reactions at the interface ; and ( 4 ) ...
... reactant to the reaction interface ; ( 2 ) transport of reaction products away from the reaction interface ; ( 3 ) the ... reactants ; ( 2 ) adequate collision frequency ; ( 3 ) the rate of chemical reactions at the interface ; and ( 4 ) ...
Page 529
... reactants that contain the elements of the film material to be deposited undergo a sequence of essentially seven steps that can be defined and listed as follows : ( 1 ) transport of the reactants to the deposition region ; ( 2 ) mass ...
... reactants that contain the elements of the film material to be deposited undergo a sequence of essentially seven steps that can be defined and listed as follows : ( 1 ) transport of the reactants to the deposition region ; ( 2 ) mass ...
Page 541
... reactants at various ratios at 300 ° C ; the frequency of the parallel - plate reactor in this example was 13.56 MHz [ 109 ] . D. Silicate Glasses Phosphosilicate glass ( PSG ) and borophosphosilicate glass ( BPSG ) can be readily ...
... reactants at various ratios at 300 ° C ; the frequency of the parallel - plate reactor in this example was 13.56 MHz [ 109 ] . D. Silicate Glasses Phosphosilicate glass ( PSG ) and borophosphosilicate glass ( BPSG ) can be readily ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength