Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 118
... reactant to the reaction interface ; ( 2 ) transport of reaction products away from the reaction interface ; ( 3 ) the ... reactants ; ( 2 ) adequate collision frequency ; ( 3 ) the rate of chemical reactions at the interface ; and ( 4 ) ...
... reactant to the reaction interface ; ( 2 ) transport of reaction products away from the reaction interface ; ( 3 ) the ... reactants ; ( 2 ) adequate collision frequency ; ( 3 ) the rate of chemical reactions at the interface ; and ( 4 ) ...
Page 529
... reactants that contain the elements of the film material to be deposited undergo a sequence of essentially seven steps that can be defined and listed as follows : ( 1 ) transport of the reactants to the deposition region ; ( 2 ) mass ...
... reactants that contain the elements of the film material to be deposited undergo a sequence of essentially seven steps that can be defined and listed as follows : ( 1 ) transport of the reactants to the deposition region ; ( 2 ) mass ...
Page 541
... reactants at various ratios at 300 ° C ; the frequency of the parallel - plate reactor in this example was 13.56 MHz [ 109 ] . D. Silicate Glasses Phosphosilicate glass ( PSG ) and borophosphosilicate glass ( BPSG ) can be readily ...
... reactants at various ratios at 300 ° C ; the frequency of the parallel - plate reactor in this example was 13.56 MHz [ 109 ] . D. Silicate Glasses Phosphosilicate glass ( PSG ) and borophosphosilicate glass ( BPSG ) can be readily ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength