Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 118
... reaction kinetics in the reactive evaporation process can be treated in exactly the same manner as for reactions ... reaction interface ; ( 2 ) transport of reaction products away from the reaction interface ; ( 3 ) the chemical reaction ...
... reaction kinetics in the reactive evaporation process can be treated in exactly the same manner as for reactions ... reaction interface ; ( 2 ) transport of reaction products away from the reaction interface ; ( 3 ) the chemical reaction ...
Page 318
... reaction is that of silane oxidation , which was originally published in 1967 for APCVD in a bell jar reactor [ 267 ] ... reaction SiH4 + O2 → SiO2 + 2H2 . ( 4.1 ) Water formation also occurs , but to a lesser extent , by the reaction ...
... reaction is that of silane oxidation , which was originally published in 1967 for APCVD in a bell jar reactor [ 267 ] ... reaction SiH4 + O2 → SiO2 + 2H2 . ( 4.1 ) Water formation also occurs , but to a lesser extent , by the reaction ...
Page 386
... reaction products . 2. Examples of Gas - Phase Reactions of Organometallic Compounds Organometallic compounds with larger ligands than methyl can decom- pose by internal rearrangement reactions , rather than simple homolysis , leading ...
... reaction products . 2. Examples of Gas - Phase Reactions of Organometallic Compounds Organometallic compounds with larger ligands than methyl can decom- pose by internal rearrangement reactions , rather than simple homolysis , leading ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength