Thin Film Processes, Volume 2 |
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Page 118
chemical reactions essential for the formation of a particular compound , one
must therefore consider the kinetics of these ... The reaction kinetics in the
reactive evaporation process can be treated in exactly the same manner as for
reactions ...
chemical reactions essential for the formation of a particular compound , one
must therefore consider the kinetics of these ... The reaction kinetics in the
reactive evaporation process can be treated in exactly the same manner as for
reactions ...
Page 318
The choice of reaction is usually dictated by the temperature limitation of the
substrate , the dielectric property and conformality ... SiH4 + O2 Reactions The
most widely used deposition reaction is that of silane oxidation , which was
originally ...
The choice of reaction is usually dictated by the temperature limitation of the
substrate , the dielectric property and conformality ... SiH4 + O2 Reactions The
most widely used deposition reaction is that of silane oxidation , which was
originally ...
Page 386
Estimates indicate that the TMG - AsHz adduct is too unstable to play a major role
in GaAs deposition ( 127 ] , but rapid heating rates could favor adduct - related
reaction products . 2 . Examples of Gas - Phase Reactions of Organometallic ...
Estimates indicate that the TMG - AsHz adduct is too unstable to play a major role
in GaAs deposition ( 127 ] , but rapid heating rates could favor adduct - related
reaction products . 2 . Examples of Gas - Phase Reactions of Organometallic ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer