Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 117
... reactive gas . The compound is formed by reaction of the evaporating metal species with the molecules of the reactive gas . Though this technique has been extensively used to deposit a variety of oxide films for optical applications ...
... reactive gas . The compound is formed by reaction of the evaporating metal species with the molecules of the reactive gas . Though this technique has been extensively used to deposit a variety of oxide films for optical applications ...
Page 192
... reactive gas is present at the substrate to form the dielectric compound . Figure 4 is useful for a qualitative description of the two modes of reactive sputtering . Here , , and O , are , respectively , the degree of target coverage ...
... reactive gas is present at the substrate to form the dielectric compound . Figure 4 is useful for a qualitative description of the two modes of reactive sputtering . Here , , and O , are , respectively , the degree of target coverage ...
Page 194
... reactive gas combinations ; the main difference being whether the plasma impedance increases or decreases with the target transition [ 122 ] . 1. High - Rate Reactive Sputtering Numerous different ... REACTIVE GAS REACTIVE 194 ROBERT PARSONS.
... reactive gas combinations ; the main difference being whether the plasma impedance increases or decreases with the target transition [ 122 ] . 1. High - Rate Reactive Sputtering Numerous different ... REACTIVE GAS REACTIVE 194 ROBERT PARSONS.
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength