Thin Film Processes, Volume 2 |
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Page 117
Reactive Evaporation Processes The difficulties involved in direct evaporation
processes that are caused by fragmentation of the vaporized compounds are
overcome in reactive evaporation , where a metal is evaporated in the presence
of the ...
Reactive Evaporation Processes The difficulties involved in direct evaporation
processes that are caused by fragmentation of the vaporized compounds are
overcome in reactive evaporation , where a metal is evaporated in the presence
of the ...
Page 192
High - rate reactive sputtering , with deposition rates comparable to those for
metals in pure inert gas , can be achieved in the “ metallic mode ” ( 113 , 114 ) . In
this high - rate mode , the sputtereroded area of the cathode remains bare , while
...
High - rate reactive sputtering , with deposition rates comparable to those for
metals in pure inert gas , can be achieved in the “ metallic mode ” ( 113 , 114 ) . In
this high - rate mode , the sputtereroded area of the cathode remains bare , while
...
Page 194
high - rate reactive sputtering is the difficulty in knowing whether the reactive gas
has reached the Fi + point , without exceeding the irreversible transition point F2
+ . The general behavior of the above characteristics is typical of all metal ...
high - rate reactive sputtering is the difficulty in knowing whether the reactive gas
has reached the Fi + point , without exceeding the irreversible transition point F2
+ . The general behavior of the above characteristics is typical of all metal ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |