Thin Film Processes, Volume 2 |
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Page 220
pressure reduced the erosion rate , reduced the crater diameter and the ion flux ,
and also resulted in a smaller maximum current per spot . It was concluded that at
higher pressures , the thicker surface layer of contaminants reduced the ...
pressure reduced the erosion rate , reduced the crater diameter and the ion flux ,
and also resulted in a smaller maximum current per spot . It was concluded that at
higher pressures , the thicker surface layer of contaminants reduced the ...
Page 306
Modelling Approach Ga ( CH3 ) 3 + AsHz → GaAs ( 198 , 199 ) Atmospheric and
reduced pressure vertical reactor with substrate rotation Ga ( CH3 ) 3 + AsHz →
GaAs [ 220 ] Atmospheric and reduced pressure horizontal reactor Atmospheric ...
Modelling Approach Ga ( CH3 ) 3 + AsHz → GaAs ( 198 , 199 ) Atmospheric and
reduced pressure vertical reactor with substrate rotation Ga ( CH3 ) 3 + AsHz →
GaAs [ 220 ] Atmospheric and reduced pressure horizontal reactor Atmospheric ...
Page 335
Chemistry , Selectivity , and Doping The majority of epitaxial Si is deposited on Si
substrate wafers in reduced - pressure reactors from chlorosilanes , SiH , Cl4 - x (
x = 0 , 1 , 2 , 4 ) ( 32 , 46 , 47 ) . The deposition temperature decreases with ...
Chemistry , Selectivity , and Doping The majority of epitaxial Si is deposited on Si
substrate wafers in reduced - pressure reactors from chlorosilanes , SiH , Cl4 - x (
x = 0 , 1 , 2 , 4 ) ( 32 , 46 , 47 ) . The deposition temperature decreases with ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer