Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 22
... regions in which various processes are dominant . As shown in Fig . 6 , the discharge consists of three glowing , or light - emitting areas , and two dark regions . Closest to the cathode is a very thin , luminous region known as the ...
... regions in which various processes are dominant . As shown in Fig . 6 , the discharge consists of three glowing , or light - emitting areas , and two dark regions . Closest to the cathode is a very thin , luminous region known as the ...
Page 59
... region through a leak valve . The substrate is located outside of the plasma chamber in much the same way as an ion beam source . Often a third electromagnet or permanent magnet is located in the sample region to control the divergence ...
... region through a leak valve . The substrate is located outside of the plasma chamber in much the same way as an ion beam source . Often a third electromagnet or permanent magnet is located in the sample region to control the divergence ...
Page 575
... region and transport into the deposition region ; ( 3 ) mixing of the plasma extracted active species with the remaining process gases in the deposition region ; and ( 4 ) deposition of a thin film on a heated substrate remote the ...
... region and transport into the deposition region ; ( 3 ) mixing of the plasma extracted active species with the remaining process gases in the deposition region ; and ( 4 ) deposition of a thin film on a heated substrate remote the ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength