Thin Film Processes, Volume 2 |
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Page 22
At very low discharge currents , the glow will not cover all regions of the cathode .
This is called the ... In this region , current flow to the cathode is governed by the
space charge limitations ( Child ' s Law ) discussed earlier . At higher and ...
At very low discharge currents , the glow will not cover all regions of the cathode .
This is called the ... In this region , current flow to the cathode is governed by the
space charge limitations ( Child ' s Law ) discussed earlier . At higher and ...
Page 59
The device consists of a source region , with typically two large electromagnet
coils just outside the chamber . The microwaves enter the chamber through a port
at the top . The details of the various tuners , the circulators , and the power ...
The device consists of a source region , with typically two large electromagnet
coils just outside the chamber . The microwaves enter the chamber through a port
at the top . The details of the various tuners , the circulators , and the power ...
Page 575
Schematic representations of the ( a ) direct and ( b ) remote PECVD processes
for the deposition of SiO2 thin films . the process are : ( 1 ) plasma excitation of a
selected subset of the processes gases in the plasma generation region ; ( 2 ) ...
Schematic representations of the ( a ) direct and ( b ) remote PECVD processes
for the deposition of SiO2 thin films . the process are : ( 1 ) plasma excitation of a
selected subset of the processes gases in the plasma generation region ; ( 2 ) ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer