Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 24
... relatively slow compared to other deposition and etching techniques and are used very infrequently . The slowness is due to the relatively low plasma density ( low discharge current ) , high gas density , and high discharge voltage . In ...
... relatively slow compared to other deposition and etching techniques and are used very infrequently . The slowness is due to the relatively low plasma density ( low discharge current ) , high gas density , and high discharge voltage . In ...
Page 272
... relatively low deposition rate ; Rickerby and Wood [ 174 ] reported rates of the order of 10 microns per hour . Considering that the coating thickness required is in the range 100 to 125 microns , it is difficult to anticipate that ...
... relatively low deposition rate ; Rickerby and Wood [ 174 ] reported rates of the order of 10 microns per hour . Considering that the coating thickness required is in the range 100 to 125 microns , it is difficult to anticipate that ...
Page 507
... relatively free of impurities . Because the mixing is accomplished in solution , components such as Ti and Si mix on the atomic scale in relatively short times . If the intention is to use this process to make a dense material , the ...
... relatively free of impurities . Because the mixing is accomplished in solution , components such as Ti and Si mix on the atomic scale in relatively short times . If the intention is to use this process to make a dense material , the ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength