Thin Film Processes, Volume 2 |
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Page 24
This points to the relatively inefficient nature of this type of plasma . Because of
the low secondary electron yields , the majority of the energy within the plasma is
eventually deposited on the cathode surface , in the form of heat following ion ...
This points to the relatively inefficient nature of this type of plasma . Because of
the low secondary electron yields , the majority of the energy within the plasma is
eventually deposited on the cathode surface , in the form of heat following ion ...
Page 272
A negative aspect of the sputter ion - plating process was its relatively low
deposition rate ; Rickerby and Wood ( 174 ) reported rates of the order of 10
microns per hour . Considering that the coating thickness required is in the range
100 to ...
A negative aspect of the sputter ion - plating process was its relatively low
deposition rate ; Rickerby and Wood ( 174 ) reported rates of the order of 10
microns per hour . Considering that the coating thickness required is in the range
100 to ...
Page 507
Because alkoxides can be multiply distilled , the products can be relatively free of
impurities . Because the mixing is accomplished in solution , components such as
Ti and Si mix on the atomic scale in relatively short times . If the intention is to ...
Because alkoxides can be multiply distilled , the products can be relatively free of
impurities . Because the mixing is accomplished in solution , components such as
Ti and Si mix on the atomic scale in relatively short times . If the intention is to ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |