Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 30
Page 348
... resistivity ) were observed at system pressures in the range of 170-225 mtorr . Typical resistivities of good films after annealing ( 60 min , 900 ° C , Ar ) were about 60 μ - cm [ 496 ] . Using the same reactants , a three - step ...
... resistivity ) were observed at system pressures in the range of 170-225 mtorr . Typical resistivities of good films after annealing ( 60 min , 900 ° C , Ar ) were about 60 μ - cm [ 496 ] . Using the same reactants , a three - step ...
Page 350
... Resistivities of 100-200 - nm thick films were between 2.8 and 3.0 μ - cm , within 10 % of the resistivity of bulk Al . However , these films also exhibited a rough surface [ 506 ] . Selective LPCVD of Al has been reported very recently ...
... Resistivities of 100-200 - nm thick films were between 2.8 and 3.0 μ - cm , within 10 % of the resistivity of bulk Al . However , these films also exhibited a rough surface [ 506 ] . Selective LPCVD of Al has been reported very recently ...
Page 557
... resistivity upon annealing was attributed to outdiffusion of F and H , presumably present in the as - deposited films , and not to the crystallization of the films . The lowest resistivity obtained with these films , after annealing ...
... resistivity upon annealing was attributed to outdiffusion of F and H , presumably present in the as - deposited films , and not to the crystallization of the films . The lowest resistivity obtained with these films , after annealing ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength