Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 72
Page 24
John L. Vossen, Werner Kern. ( a ) ( b ) + SAMPLES SAMPLES Fig . 7. ( a ) Sample location for etching in a dc plasma . ( b ) Sample locations for deposition of sputtered cathode material in a dc plasma . For a secondary electron yield of ...
John L. Vossen, Werner Kern. ( a ) ( b ) + SAMPLES SAMPLES Fig . 7. ( a ) Sample location for etching in a dc plasma . ( b ) Sample locations for deposition of sputtered cathode material in a dc plasma . For a secondary electron yield of ...
Page 52
... sample , films can be sputtered onto the sample ( from the cathode ) with a simple translation of the sample past the cathode ( Fig . 36 ) . The dimensions of the racetrack are not critical to the operation of the cathode , and devices ...
... sample , films can be sputtered onto the sample ( from the cathode ) with a simple translation of the sample past the cathode ( Fig . 36 ) . The dimensions of the racetrack are not critical to the operation of the cathode , and devices ...
Page 404
... sample surface . A controlled current is driven through the sample , removing a known amount of material . The sequence of etch and measurement is repeated so that a carrier profile through the sample is obtained over a range determined ...
... sample surface . A controlled current is driven through the sample , removing a known amount of material . The sequence of etch and measurement is repeated so that a carrier profile through the sample is obtained over a range determined ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
34 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength